Electronic and optical properties of semiconductor quantum wells
Sanders, Gary Donald
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https://hdl.handle.net/2142/25271
Description
Title
Electronic and optical properties of semiconductor quantum wells
Author(s)
Sanders, Gary Donald
Issue Date
1985
Doctoral Committee Chair(s)
Chang, Yia-Chung
Department of Study
Physics
Discipline
Physics
Degree Name
Ph.D.
Degree Level
Dissertation
Keyword(s)
semiconductor quantum wells
GaAs-AlGaAs semiconductors
subband mixing
valence subband structure
exciton binding
oscillator strengths
absorption spectra
Language
en
Abstract
In this thesis we study electronic and optical properties of GaAs-AlGaAs semiconductors quantum wells. The light and heavy hole subbands are strongly hybridized and this subband mixing has important effects on electronic and optical properties. A systematic study of the mixing effects on valence subband structure, exciton binding energies and oscillator strengths, and absorption spectra is undertaken using a multiband effective mass method which takes valence subband mixing into account. In addition the method is extended to study uniaxial stress and modulation doping effects. Finally, the binding energies and radiative lifetimes of bound excitons in direct gap semiconductors are studied in a simple model as a prelude to the study of bound excitons in quantum wells.
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