Quasi-two-dimensional phenomena at AlGaAs-GaAs heterointerfaces, multiple quantum wells and modulation-doped structures
Masselink, William Ted
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https://hdl.handle.net/2142/25252
Description
Title
Quasi-two-dimensional phenomena at AlGaAs-GaAs heterointerfaces, multiple quantum wells and modulation-doped structures
Author(s)
Masselink, William Ted
Issue Date
1986
Doctoral Committee Chair(s)
Chang, Yia-Chung
Morkoc, Hadis
Department of Study
Physics
Discipline
Physics
Degree Name
Ph.D.
Degree Level
Dissertation
Keyword(s)
AlGaAs-GaAs heterointerfaces
multiple quantum wells
modulation-doped structures
optical absorption coefficients
exciton oscillator strengths
Language
en
Abstract
This thesis describes a subset of phenomena at AIGaAs-GaAs heterointerfaces related to multiple quantum wells and modulation-doped structures. In the first section. two important results concerning multiple quantum well systems are described: optical absorption coefficients and exciton oscillator strengths in AIGaAs-GaAs multiple quantum wells are greatly enhanced as well widths become narrower: this effect is in excellent agreement with recent calculation. Additionally acceptor energies in quantum wells are studied both theoretically and experimentally. The theoretical study is extended to include the effects of magnetic. electric. and stress fields on acceptors in GaAs and in AIGaAs-GaAs quantum wells.
In the second section an improved charge control model for \10DFETs is described which predicts some observed experimental phenomena. This model uses boundary conditions obtained from a numerical solution of Schrodinger's and Poisson's equations at an AIGaAs-GaAs heterointerface. Finally. the first measurements of electron velocity versus electric field in a modulation-doped system using the geometric magnetoresistance method are reported. These results indicate that a high low-field electron mobility is not very important for \10DFET operation.
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