Thermodynamics of disordered C1-xCux and Si1-xAux near the metal-insulator transition
La Madrid, Marissa Alisangco
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https://hdl.handle.net/2142/25206
Description
Title
Thermodynamics of disordered C1-xCux and Si1-xAux near the metal-insulator transition
Author(s)
La Madrid, Marissa Alisangco
Issue Date
1990
Doctoral Committee Chair(s)
Mochel, J.M.
Department of Study
Physics
Discipline
Physics
Degree Name
Ph.D.
Degree Level
Dissertation
Keyword(s)
thermodynamics
metal-insulator transition
electron-phonon relaxation time
three dimensional films
thermal boundary resistance
Language
en
Abstract
Measurements of the electron-phonon relaxation time are carried out, using
both a direct and indirect method, in three dimensional films of Cl-xCUx and
Si1-xAUx in the temperature range 0.3K-4K. The electron-phonon resistance and
thermal boundary resistance are also measured.
The directly measured relaxation times for C1-zCUz can agree with theoretical
predictions if a longitudinal sound speed similar to that of graphite and a longitudinal
to transverse speed ratio similar to that of silicate glasses are used. The
results for the Sh-zAUz only qualitatively agree with theory. The measured thermal
resistances are in reasonable agreement with other experiments.
Comparison of the direct and indirect measurements of the relaxation times reveal
that the specific heat coefficient, behaves approximately like T-.6 in Cl-zCUz
below lK, in qualitative agreement with current theories describing the behavior of
disordered, interacting electrons near the metal-insulator transition.
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