Initial stages of interface formation between group III, IV, and V elements and Si and Ge surfaces
Rich, Daniel Hershel
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https://hdl.handle.net/2142/25092
Description
Title
Initial stages of interface formation between group III, IV, and V elements and Si and Ge surfaces
Author(s)
Rich, Daniel Hershel
Issue Date
1989
Doctoral Committee Chair(s)
Chiang, Tai-Chang
Department of Study
Physics
Discipline
Physics
Degree Name
Ph.D.
Degree Level
Dissertation
Keyword(s)
interface formation
group III absorbates
group IV absorbates
group V absorbates
silicon
germanium
absorbate-to-substrate bonding coordination
Language
en
Abstract
The initial stages of interface formation between various group III, IV,
and V adsorbates and the Si and Ge surfaces have been examined with high
resolution angle-integrated and angle-resolved photoemission spectroscopy using
synchrotron radiation. The Si 2p and Ge 3d surface-shifted core level
components are seen to be converted into components which are indistinguishable
from the bulk component through submonolayer adsorption for the following
systems: In/Si(OOl), Sb/Si(OOl), Sb/Si(lll), Sn/Si(OOl), and Sb/Ge(OOl). For
In/Ge(OOl), a chemically shifted Ge 3d core level interface component,
distinguishable from the bulk component, is observed. The average number of Si
and Ge surface dimer atoms which are modified in the presence of an adsorbate
atom, which is referred to as the adsorbate-to-substrate bonding coordination
number (BCN), is obtained for various In, Sb, and Sn coverages on Si(OOl) and
Ge(OOl). The relative homogeneity of the adsorbate site bonding is evaluated
by examining the line shapes of the Sn, In and Sb 4d core level spectra.
Structural models, consistent with the data, are presented. The Fermi-level
positions relative to the gaps and the Schottky-barrier heights are obtained
for the various systems. Photoemission of the Sb-saturated Si(OOl), Si(lll),
and Si(llO) surfaces revealed that the Fermi-level position crosses the
conduction-band minimum (CBM) of Si for Sb coverages approaching a
one-monolayer saturation limit. Momentum-resolved photoemission of the
Sb-saturated Si(OOl) and Si(llO) surfaces showed the existence of an occupied
initial state located near the CBM. The photoemission intensity of the state
has been examined as a function of photon energy with constant initial-state
difference spectroscopy which showed various resonances occurring due to
transitions to different final states from the CBM. The metallic character of
the surface is shown to be due to degenerate doping in the near-surface region.
The Sb saturation of Si{lll} and Si(OOl) was found to allow the measurement of
the bulk band-dispersion relations along the high symmetry f-A-L and r-h-X
directions over a wide photon energy range (37-153 eV). The surface electronic
topography of Sb/Si(OOI) is probed with scanning tunneling microscopy which
shows changes in the spatial distribution of the occupied and unoccupied states
derived from the Si-dimer dangling bonds upon Sb adsorption.
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