Antimonide-based field-effect transistors and heterojunction bipolar transistors grown by molecular beam epitaxy

Liao, Chi-chih

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https://hdl.handle.net/2142/24169 Copy

Description

Title

Antimonide-based field-effect transistors and heterojunction bipolar transistors grown by molecular beam epitaxy

Author(s)

Liao, Chi-chih

Issue Date

2011-05-25T14:52:50Z

Director of Research (if dissertation) or Advisor (if thesis)

Cheng, Keh-Yung

Doctoral Committee Chair(s)

Cheng, Keh-Yung

Committee Member(s)

• Hsieh, Kuang-Chien
• Feng, Milton
• Jin, Jianming

Department of Study

Electrical & Computer Eng

Discipline

Electrical & Computer Engr

Degree Granting Institution

University of Illinois at Urbana-Champaign

Degree Name

Ph.D.

Degree Level

Dissertation

Keyword(s)

• molecular beam epitaxy
• Field Effect Transistor (FET)
• hetero-junction bipolar transistor
• Antimonide

Abstract

For the development of novel high-speed devices, the epitaxial growth of antimonide-based compounds and devices, including field effect transistors (FETs) and hetero-junction bipolar transistors (HBTs), was explored using gas-source molecular beam epitaxy (MBE). The first and second parts of the dissertation detail the growth of InAsSb and InGaSb as the channel materials for n- and p-type FETs, respectively. Both compounds were grown metamorphically on InP substrates with a composite AlSb/AlAs0.5Sb0.5 buffer layer, which was proved to be effective in enhancing the epitaxial quality. By optimizing the growth conditions, the intrinsic carrier mobilities of n-type InAsSb and p-type pseudomorphic InGaSb quantum wells could reach 18000 and 600 cm2/V-s at room temperature, respectively. InAsSb FET showed a high transconductance of 350 mS/mm, which indicated the high potential in the high-speed applications. The third part of the dissertation describes the modification of the emitter-base junction of ultra-fast type-II GaAsSb-based HBTs in order to eliminate the carrier blocking and enhance the current gain. InAlP was used to replace the InP emitter and form a type-I emitter-base junction. Results for large devices show that this modification could improve DC current gain from 80 to 120. The results indicate that type-I/II InAlP/GaAsSb HBTs are promising to achieve better radio-frequency (RF) performance with higher current driving capability.

Graduation Semester

2011-05

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http://hdl.handle.net/2142/24169

Copyright and License Information

Copyright 2011 Chi-chih Liao

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