Topics in the theory of semiconductors: I. Novel semiconductors II. Uniaxial stress dependence of deep impurities
Jenkins, David William
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https://hdl.handle.net/2142/23901
Description
Title
Topics in the theory of semiconductors: I. Novel semiconductors II. Uniaxial stress dependence of deep impurities
Author(s)
Jenkins, David William
Issue Date
1988
Doctoral Committee Chair(s)
Dow, J.D.
Chang, Yia-Chung
Department of Study
Physics
Discipline
Physics
Degree Name
Ph.D.
Degree Level
Dissertation
Keyword(s)
semiconductors
uniaxial stress dependence
deep impurities
electronic energy band structures
Language
en
Abstract
This thesis is devided into four self-contained chapters. Chapters 1, and 3 deal with the electronic energy band structures of novel semiconductors and chapter 4 deals with the uniaxial stress dependence of deep substitutional impurity levels in semiconductors.
Chapter 1: The electronic energy band structure and deep substitutional impurity levels for metastable are predicted with a
nearest-neighbor, tight-binding model. Gel_xS~ is a semiconductor-metal
alloy
which may have applications in infrared detection or
as
a
Gunn device.
Doping anomalies
are
found:
deep impurity
levels
in
the
band
gap
of
Ge
necessarily
make
deep-to-shallow
transitions
as
the
Sn
concentration
increases and
some
impurities have false valences.
Chapter 2: The electronic energy band structure and deep substitutional impurity levels for InN and the alloys Inl_xGaxN and Inl_xA£xN are predicted with a nearest-neighbor, tight-binding model. These wurtzite alloys have direct fundamental energy band gaps ranging in the optical spectrum from orange visible light through ultraviolet. Dopants are suggested for possible application of these materials as light-emitting diodes and solid-state lasers.
2
iv
Chapter 3: Energy band gaps for the metastable, substitutional, crystalline alloys are predicted. These materials undergo a zincblende-to-diamond, order-disorder, structural phase transition as a function of composition x. The alloys exhibit V-shaped bowing in the energy band gap as a function of composition and a general lowering of the band gap: both effects are due to the phase transition.
Chapter 4: The uniaxial stress dependence of energy levels of deep
substitutional
impurities
in
zincblende
III-V
and
diamond
Group-IV
semiconductors
for
applied
stress
in
the
[100],
[110] ,
and
[Ill]
crystallographic
directions
are
predicted.
Stress
applied
in
the
[110]
direction,
in particular,
causes
shifts and splittings
of
the
deep
levels
associated with an impurity to (i) uniquely determine the symmetry of the levels (s-like or p-like) and (ii) identify the site (anion or cation) of the associated impurity.
Parts of this thesis have been published or are accepted for publication: Chapter 1, D. Y. Jenkins and J. D. Dow, Phys. Rev. B, in press and Chapter 3, D. Y. Jenkins, K. E. Newman, and J. D. Dow, Phys. Rev. B 32, 4034 (1985).
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