Application of electroabsorption in a semiconductor laser for electromagnetic field sensing
Genis, Patrick Charles
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https://hdl.handle.net/2142/23363
Description
Title
Application of electroabsorption in a semiconductor laser for electromagnetic field sensing
Author(s)
Genis, Patrick Charles
Issue Date
1990
Doctoral Committee Chair(s)
Verdeyen, Joseph T.
Department of Study
Electrical and Computer Engineering
Discipline
Electrical and Computer Engineering
Degree Granting Institution
University of Illinois at Urbana-Champaign
Degree Name
Ph.D.
Degree Level
Dissertation
Keyword(s)
Engineering, Electronics and Electrical
Physics, Condensed Matter
Physics, Optics
Language
eng
Abstract
The application of electroabsorption in an AlGaAs quantum-well semiconductor laser device for optically based electromagnetic field sensing has been studied. A separate confinement heterostructure laser design containing a single quantum well and a steplike waveguiding index profile has demonstrated efficient modulation when operated as a light absorber rather than as an emitter.
Observations of changes in the transmitted optical power through this device as a function of the applied forward and/or reverse dc bias have demonstrated nearly linear transfer functions for a given operating wavelength. Measurable changes in transmission were also observed for relatively small changes in applied voltage ($\approx$100 $\mu$V) allowing for the possibility of sensors with high sensitivity. Investigation of the high frequency operation of the device has shown a one-to-one correspondence in amplitude and phase between the applied RF voltage and the modulation of the transmitted optical power over a wide frequency range ($>$1 GHz). Linear operation has been observed for a dynamic range exceeding 75 dB of the applied RF power at 20 MHz.
Experiments that had coupled receiving antennas to a modulator have demonstrated the ability to measure an incident electric field of 34 V/m with a 300 MHz bandwidth and the corresponding time derivative of the magnetic field with a 30 MHz bandwidth. At 20 MHz, electric fields as small as 2 V/m have been measured. A 24 dB dynamic range in the measured electric field has been demonstrated and an expected range of 75 dB would imply the ability to measure fields larger than 10$\sp4$ V/m.
The demonstrated performance characteristics of wide bandwidth operation and linear response with respect to the applied voltage make these types of semiconductor structures attractive for wide-band electromagnetic field sensing as well as for other low-power modulation applications.
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