Characterization of S-bend optical waveguides fabricated by impurity- and vacancy-induced layer disordering
Tang, Tony Kai Tung
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https://hdl.handle.net/2142/23284
Description
Title
Characterization of S-bend optical waveguides fabricated by impurity- and vacancy-induced layer disordering
Author(s)
Tang, Tony Kai Tung
Issue Date
1991
Doctoral Committee Chair(s)
DeTemple, Thomas A.
Department of Study
Electrical and Computer Engineering
Discipline
Electrical and Computer Engineering
Degree Granting Institution
University of Illinois at Urbana-Champaign
Degree Name
Ph.D.
Degree Level
Dissertation
Keyword(s)
Engineering, Electronics and Electrical
Physics, Electricity and Magnetism
Physics, Condensed Matter
Language
eng
Abstract
The routing capabilities of waveguides defined by Zn, SiO$\sb2$, and In/SiO$\sb2$ Impurity-Induced Layer Disordering (IILD) of a single GaAs quantum-well graded barrier laser structure are investigated using raised-cosine S-bend geometries. The 3-dB transition length for a 100 $\mu$m offset S-bend waveguides fabricated using the Zn, SiO$\sb2$, or In/SiO$\sb2$ IILD process is less than 300 $\mu$m for near single-mode guides. In addition, vacancy-induced layer disordering (VILD) of the native quantum-well region is investigated and is shown to increase the band gap to a point at which the material is low-loss for radiation generated by a laser made from the native material. The 3-dB length for these blue-shifted waveguides decreases to about 230 $\mu$m due to reduced mode conversion. This VILD technique is also used to fabricate lasers with various blue-shifted emission wavelengths. Secondary Ion Mass Spectroscopy (SIMS) is used to study the separate and co-diffusions of silicon and indium from thin film sources. Indium is inferred to have a higher diffusion coefficient than silicon in GaAs and AlGaAs and to result in a similar degree of impurity-induced disordering of the single quantum-well laser structure.
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