The growth and characterization of III-V compound semiconductor materials by metalorganic chemical vapor deposition and laser photochemical vapor deposition
York, Pamela Kay
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https://hdl.handle.net/2142/22864
Description
Title
The growth and characterization of III-V compound semiconductor materials by metalorganic chemical vapor deposition and laser photochemical vapor deposition
Author(s)
York, Pamela Kay
Issue Date
1990
Doctoral Committee Chair(s)
Coleman, James J.
Department of Study
Electrical and Computer Engineering
Discipline
Electrical and Computer Engineering
Degree Granting Institution
University of Illinois at Urbana-Champaign
Degree Name
Ph.D.
Degree Level
Dissertation
Keyword(s)
Engineering, Electronics and Electrical
Physics, Condensed Matter
Engineering, Materials Science
Language
eng
Abstract
Despite the vast use of metalorganic chemical vapor deposition (MOCVD) for the growth of optical and electronic devices, it is a process for which the details of the reaction mechanisms are not well understood. Efforts aimed at gaining insight into growth-related matters will be described here and involve deposition in both the low temperature, kinetically-controlled growth regime ($<$600$\sp\circ$C) as well as the conventional, diffusion-limited growth regime (600-800$\sp\circ$C). For deposition at lower temperatures, an ultraviolet excimer laser is used to assist in the growth of GaAs, motivated by the fact that the common MOCVD precursors such as trimethylgallium and arsine are absorbing in the ultraviolet region of the spectrum. Progress toward obtaining device quality material with growth at reduced substrate temperatures in the presence of laser irradiation is assessed.
Furthermore, historically, only lattice-matched heterostructures were considered feasible options for device applications. However, the combining of the lattice-mismatched and therefore strained layers of InGaAs-GaAs-AlGaAs significantly extends the range of material parameters and increases the flexibility in the band structure engineering of electronic and optical devices. The existence of strain brings about several important modifications to the energy band structure that lead to improved performance over unstrained quantum well lasers. The unique metallurgical aspects of strained materials and, in particular, the consequences of mixing the seemingly incompatible alloys of In$\sb{\rm x}$Ga$\sb{\rm 1-x}$As and Al$\sb{\rm y}$Ga$\sb{\rm 1-y}$As on GaAs are presented and discussed here. A brief theoretical formulation of strain-induced modifications to the InGaAs band structure, the relevance of these changes to quantum well lasers, and experimental observations in various sets of experiments designed to ascertain the viability of strained InGaAs-GaAs-AlGaAs quantum well lasers are described.
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