High-purity epitaxial growth and characterization of III-V compound semiconductors
Roth, Thomas John
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https://hdl.handle.net/2142/22720
Description
Title
High-purity epitaxial growth and characterization of III-V compound semiconductors
Author(s)
Roth, Thomas John
Issue Date
1989
Doctoral Committee Chair(s)
Stillman, Gregory E.
Department of Study
Electrical and Computer Engineering
Discipline
Electrical and Computer Engineering
Degree Granting Institution
University of Illinois at Urbana-Champaign
Degree Name
Ph.D.
Degree Level
Dissertation
Keyword(s)
Chemistry, General
Engineering, Electronics and Electrical
Engineering, Mechanical
Language
eng
Abstract
The growth and characterization of epitaxial indium gallium arsenide phosphide compound semiconductor films are described. Methods have been developed to improve the purity of both InP and GaAs and to better assess the crystalline homogeneity of the InGaAsP alloy system.
A thermodynamic analysis of impurity incorporation in the hydride vapor phase growth technique is presented for InP and GaAs. In this work techniques have been developed to produce state-of-the-art high purity InP epitaxial films. These films are then utilized in the chemical identification of acceptors in low temperature photoluminescence. The effects of adding oxygen and varying the input partial pressure of arsine on impurity incorporation in GaAs are examined in detail. A controlled amount of oxygen added to the reaction vessel is shown to reduce dramatically the amount of silicon (one of the primary impurity species) incorporated into GaAs. The input partial pressure of arsine is found to impact the incorporation of sulfur, germanium and silicon (germanium and silicon as acceptors as well as donors).
Double crystal x-ray diffractometry is used to provide an improved method to assess the quality of alloys of InGaAsP. Diffraction profiles which approach the theoretical limit of this material system are presented.
Furthermore, a nondestructive technique for determining curvature in nonplanar crystals is presented.
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