Metalorganic chemical vapor deposition, ion beam mixing, and selective epitaxy of III-V semiconductors
Forbes, David Vincent
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https://hdl.handle.net/2142/22704
Description
Title
Metalorganic chemical vapor deposition, ion beam mixing, and selective epitaxy of III-V semiconductors
Author(s)
Forbes, David Vincent
Issue Date
1995
Doctoral Committee Chair(s)
Coleman, James J.
Department of Study
Materials Science and Engineering
Discipline
Materials Science and Engineering
Degree Granting Institution
University of Illinois at Urbana-Champaign
Degree Name
Ph.D.
Degree Level
Dissertation
Keyword(s)
Engineering, Electronics and Electrical
Engineering, Materials Science
Language
eng
Abstract
Metalorganic Chemical Vapor Deposition (MOCVD) is a versatile growth technique commonly used to grow III-V compound semiconductor materials. A review of many seminal studies investigating the growth mechanisms of GaAs epitaxial growth is presented. Carbon is an intrinsic impurity in GaAs and AlGaAs grown by MOCVD and a number of growth variables can be modified to minimize impurity levels. Results will be presented illustrating a new dependence of background carbon levels on growth temperature in AlGaAs. These data are discussed qualitatively in terms of existing models for GaAs growth and carbon incorporation.
Ion beam mixing in III-V semiconductor matrices has also been investigated. It is observed that mixing in semiconductor materials is much greater than metal systems. In addition, the amount of mixing is dependent upon the crystal structure of the matrix, decreasing sharply at an irradiation temperature where the matrix remains crystalline during the irradiation.
Selective epitaxy of GaAs and InGaAs has been investigated using MOCVD. Several aspects of the growth process are discussed and results are presented for the successful operation of semiconductor lasers fabricated by a three-step growth technique utilizing selective area epitaxy to achieve lateral band-gap tailoring.
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