Experimental investigation of hot electron and related effects in gallium(aluminum)arsenide devices
Higman, Ted King
This item is only available for download by members of the University of Illinois community. Students, faculty, and staff at the U of I may log in with your NetID and password to view the item. If you are trying to access an Illinois-restricted dissertation or thesis, you can request a copy through your library's Inter-Library Loan office or purchase a copy directly from ProQuest.
Permalink
https://hdl.handle.net/2142/22480
Description
Title
Experimental investigation of hot electron and related effects in gallium(aluminum)arsenide devices
Author(s)
Higman, Ted King
Issue Date
1989
Doctoral Committee Chair(s)
Coleman, James J.
Department of Study
Electrical and Computer Engineering
Discipline
Electrical and Computer Engineering
Degree Granting Institution
University of Illinois at Urbana-Champaign
Degree Name
Ph.D.
Degree Level
Dissertation
Keyword(s)
Engineering, Electronics and Electrical
Language
eng
Abstract
The advance of crystal growth technology, specifically metalorganic chemical vapor deposition (MOCVD) as it relates to this work, has made it practical to manufacture an entirely new class of heterojunction devices. Physical properties of semiconductor heterojunction devices such as resonant tunneling and ballistic transport and various hot electron effects discussed within, have been moved from the status of academic curiosity to physically realizable, useful effects.
The theoretical and experimental results from the heterostructure hot electron diode (HHED), a two-terminal device which exhibits S-shaped negative differential resistance, are presented, which shed new light on the transport processes involved in the tunneling, resonant tunneling and thermionic emission processes in semiconductor heterostructures. In support of some of the conclusions about the heterostructure hot electron diode, experiments involving transport of two-dimensional electrons in the negative resistance field effect transistor (NERFET) in high crossed electric and magnetic fields are also presented. In addition, pertinent facts relating to the fabrication and test of these devices are presented in order to obtain a clear picture of the simple techniques used to obtain the data contained herein.
Use this login method if you
don't
have an
@illinois.edu
email address.
(Oops, I do have one)
IDEALS migrated to a new platform on June 23, 2022. If you created
your account prior to this date, you will have to reset your password
using the forgot-password link below.
