Monte Carlo simulation of quasi-one-dimensional semiconductors
Briggs, Stephen Jeffrey
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https://hdl.handle.net/2142/22368
Description
Title
Monte Carlo simulation of quasi-one-dimensional semiconductors
Author(s)
Briggs, Stephen Jeffrey
Issue Date
1990
Doctoral Committee Chair(s)
Leburton, Jean-Pierre
Department of Study
Electrical and Computer Engineering
Discipline
Electrical and Computer Engineering
Degree Granting Institution
University of Illinois at Urbana-Champaign
Degree Name
Ph.D.
Degree Level
Dissertation
Keyword(s)
Physics, Electricity and Magnetism
Physics, Condensed Matter
Language
eng
Abstract
Because of the particular confinement configuration of one-dimensional systems, the absence of angular randomization during scattering makes the carrier distribution sensitive to external perturbations and causes appreciable deviations from the equilibrium relatively rapidly. A Monte Carlo simulation is presented of a multisubband quasi-one-dimensional gallium arsenide-aluminum gallium arsenide structure. The model includes multiple subbands, polar optic and acoustic phonons, intervalley scattering, and band structure non-parabolicity.
The linear approximation to the Boltzmann Transport Equation is found to be inconsistent for fields as low as 50 V/cm. A situation occurs under longitudinal field conditions where an upper subband population is enhanced with respect to the bottom subband. Intersubband optical transitions with the possibility of far-infrared stimulated emission seem to be significant.
Differential mobility in excess of twice the bulk value at 300 K is obtained. The simulation estimates the time required for electrons to undergo intervalley scattering to three-dimensional states to be in the range of 4 nsec down to 1 psec for fields in the range of 100 V/cm to 8 kV/cm. The corresponding distances in the wire vary from 130 $\mu$m down to the submicron range.
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