Native oxidation of selectively disordered aluminum gallium arsenide quantum well heterostructures: Deep oxide structures for high performance lasers and waveguides
Krames, Michael Ragan
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https://hdl.handle.net/2142/22361
Description
Title
Native oxidation of selectively disordered aluminum gallium arsenide quantum well heterostructures: Deep oxide structures for high performance lasers and waveguides
Author(s)
Krames, Michael Ragan
Issue Date
1995
Department of Study
Electrical and Computer Engineering
Discipline
Electrical and Computer Engineering
Degree Granting Institution
University of Illinois at Urbana-Champaign
Degree Name
Ph.D.
Degree Level
Dissertation
Keyword(s)
Engineering, Electronics and Electrical
Language
eng
Abstract
"Data are presented showing that ""deep,"" device-quality native oxide structures can be formed in selected areas in $\rm Al\sb{x}Ga\sb{1-x}$As-GaAs quantum well heterostructure (QWH) crystals. The deep oxides are formed using a combination of improved area-selective impurity-induced layer disordering (IILD) and water vapor oxidation at an elevated temperature (525$\sp\circ$C). The resulting oxide extends from the QWH crystal surface into the lower confining layers, penetrating the active region and forming a deep, insulating, low-refractive-index structure with a smooth interface that is free of defects and dislocations."
Data are presented on devices utilizing the large lateral index step provided by the deep oxide, including high performance AlGaAs-GaAs QWH stripe-geometry laser diodes, waveguides with low bend loss, and low-threshold curved-geometry lasers. These devices display tight routing capability and suggest compact, integrable geometries for reducing the real-estate requirements (and the cost) of the optoelectronic integrated circuits and for offering less constraint in circuit design.
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