The growth of aluminum gallium arsenide/gallium arsenide graded barrier quantum well heterostructure lasers on planar and nonplanar substrates by metalorganic chemical vapor deposition
Givens, Michael Eugene
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https://hdl.handle.net/2142/21660
Description
Title
The growth of aluminum gallium arsenide/gallium arsenide graded barrier quantum well heterostructure lasers on planar and nonplanar substrates by metalorganic chemical vapor deposition
Author(s)
Givens, Michael Eugene
Issue Date
1992
Doctoral Committee Chair(s)
Coleman, James J.
Department of Study
Electrical and Computer Engineering
Discipline
Electrical Engineering
Degree Granting Institution
University of Illinois at Urbana-Champaign
Degree Name
Ph.D.
Degree Level
Dissertation
Keyword(s)
Engineering, Electronics and Electrical
Language
eng
Abstract
Metalorganic chemical vapor deposition (MOCVD) is a crystal growth technique which has demonstrated the capacity to deposit epitaxial layers possessing the high levels of crystalline quality and material purity required for the fabrication of state of the art devices in a variety of material systems. In this work, the MOCVD process and reactor design and operation are discussed in detail. Variations in material quality as a function of MOCVD growth parameters and the associated ramifications when applied to the growth of laser structures are also analyzed.
Underlying principles, fabrication, and experimental operational characteristics of a nonplanar laser array structure grown on a periodically corrugated substrate are presented. These structures are desirable due to their ease of fabrication and demonstrated potential for use in high power applications. A self-consistent two-dimensional theoretical model which accurately describes the operational physics of these nonplanar arrays is also developed.
Design, optimization, and underlying physics of a sophisticated quantum well laser structure, the separate confinement heterostructure quantum well laser, is considered. The capability to realize low threshold devices having both indirect and direct barrier layers is demonstrated and a set of basic structural design rules aimed at the achievement of minimal threshold current density in single quantum well devices is presented.
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