Gas source molecular beam epitaxy of aluminum gallium indium phosphide for visible spectrum light emitting diodes
Baillargeon, James Nelson
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https://hdl.handle.net/2142/21464
Description
Title
Gas source molecular beam epitaxy of aluminum gallium indium phosphide for visible spectrum light emitting diodes
Author(s)
Baillargeon, James Nelson
Issue Date
1991
Doctoral Committee Chair(s)
Cheng, Keh-Yung
Department of Study
Electrical and Computer Engineering
Discipline
Electrical Engineering
Degree Granting Institution
University of Illinois at Urbana-Champaign
Degree Name
Ph.D.
Degree Level
Dissertation
Keyword(s)
Physics, Electricity and Magnetism
Physics, Condensed Matter
Engineering, Materials Science
Language
eng
Abstract
Gas source molecular beam epitaxy is an advanced crystal growth technique that has been shown to be capable of producing high quality, ultra-thin semiconductor layers and interfaces, excellent dopant and thickness uniformity, and precisely controlled compositions in the aluminum gallium indium arsenide and indium phosphide material systems. This work extends this growth technique to the aluminum gallium indium phosphide material system and demonstrates that it is a potentially viable and attractive technique for producing visible optoelectronic devices.
In this work, particular emphasis is placed upon the surface reflection high energy electron diffraction pattern and its relationship to the equilibrium vapor pressure of phosphorus along the Ga + P liquidus. The selective desorption during growth of the surface atoms and its importance to the overall chemical composition, and the accompanied effect on the crystalline quality and optical properties are also discussed. The luminescence properties of epitaxial GaP doped with nitrogen are investigated using cracked PH$\sb3$ and NH$\sb3$. Emphasis is placed on the species generated by the cracking process and that which is responsible for the substitutional incorporation of nitrogen onto the growth surface. In addition, the origin of the natural (111) ordering is discussed and the related energy band gap lowering data are presented. Data are also presented for the thermal and catalytic disassociation of arsine, phosphene and ammonia for various cracker designs. Finally, using the results obtained by extensive material characterization, data for some preliminary optical and electronic device structures are presented, which indicate that this growth technique has significant merit as applied to this material system.
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