University of Illinois Urbana-Champaign

Threshold current and modulation response of semiconductor lasers

Kosinovsky, Gregory Alexander

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9543633.pdf

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https://hdl.handle.net/2142/21124

Description

Title
Threshold current and modulation response of semiconductor lasers
Author(s)
Kosinovsky, Gregory Alexander
Issue Date
1995
Doctoral Committee Chair(s)
Hess, Karl
Department of Study
Electrical and Computer Engineering
Discipline
Electrical Engineering
Degree Granting Institution
University of Illinois at Urbana-Champaign
Degree Name
Ph.D.
Degree Level
Dissertation
Date of Ingest
2011-05-07T12:59:04Z
Keyword(s)
  • Engineering, Electronics and Electrical
  • Physics, Electricity and Magnetism
  • Physics, Optics
Language
eng
Abstract
  • The possibility of carrier charge imbalance in the active region of quantum well lasers is demonstrated (in contrast to the usual presumption of charge neutrality in the region), and the resulting effect on the threshold current is examined. The investigations are performed with a simple rate equation simulator, as well as with a self-consistent laser simulator MINILASE. The models predict similar qualitative trends in threshold current dependencies.
  • A novel model is developed for the lasing threshold analysis of Vertical Cavity Surface Emitting Lasers based on the first principles analysis of resonant cavity E-M field enhancement by L. F. Register. The validity of the model is confirmed by comparison with the standard Fabry-Perot model for conventional edge emitting lasers. The utility of the new model in special cases of the Vertical Cavity Laser analysis is discussed.
  • A theoretical investigation of the effect of longitudinal-optic phonon imbalance on the modulation response of semiconductor lasers was performed using the MINILASE simulator. A novel formalism is developed for the inclusion of phonon-assisted capture into the self-consistent simulation. As a result, a new perspective on the role of hot phonons, which hitherto was thought to be strictly detrimental to the high frequency modulation response, was developed. Our simulations show that, depending on the value of the carrier capture coefficient, nonequilibrium phonons may either improve or worsen the modulation bandwidth.
Type of Resource
text
Permalink
http://hdl.handle.net/2142/21124
Copyright and License Information
Copyright 1995 Kosinovsky, Gregory Alexander

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