Full band ensemble Monte Carlo simulation of silicon devices
Lee, Christopher HeeChang
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https://hdl.handle.net/2142/20595
Description
Title
Full band ensemble Monte Carlo simulation of silicon devices
Author(s)
Lee, Christopher HeeChang
Issue Date
1994
Doctoral Committee Chair(s)
Ravaioli, Umberto
Department of Study
Electrical and Computer Engineering
Discipline
Electrical Engineering
Degree Granting Institution
University of Illinois at Urbana-Champaign
Degree Name
Ph.D.
Degree Level
Dissertation
Keyword(s)
Engineering, Electronics and Electrical
Language
eng
Abstract
A Monte Carlo simulator for silicon devices has been developed. The band structure data for this self-consistent device simulator were computed using the empirical pseudopotential method. The ensemble Monte Carlo technique used in the simulations is described in detail. A homogeneous simulator, based on the same transport physics, is used to calibrate the device simulator as well as to indicate the shortcomings of more traditional simulators such as drift-diffusion based models, hydrodynamic and energy balance based models, and nonparabolic band approximation Monte Carlo models. A conventional metal-oxide-semiconductor field effect transistor (MOSFET) is simulated as a test case to validate the simulator. Finally, a floating gate memory element (non-volatile memory) is also examined. In this simulation, the Monte Carlo simulator is used as a post-processor to PISCES IIB in the interest of execution time. Despite the lack of self-consistency and rigor, the simulator is able to produce results which are in good agreement with experimental data.
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