Native oxides on aluminum-bearing III-V semiconductors with applications to single-mode behavior, bistability and switching
El-Zein, Nada Abdullatif
This item is only available for download by members of the University of Illinois community. Students, faculty, and staff at the U of I may log in with your NetID and password to view the item. If you are trying to access an Illinois-restricted dissertation or thesis, you can request a copy through your library's Inter-Library Loan office or purchase a copy directly from ProQuest.
Permalink
https://hdl.handle.net/2142/20418
Description
Title
Native oxides on aluminum-bearing III-V semiconductors with applications to single-mode behavior, bistability and switching
Author(s)
El-Zein, Nada Abdullatif
Issue Date
1995
Doctoral Committee Chair(s)
Holonyak, Nick, Jr.
Department of Study
Electrical and Computer Engineering
Discipline
Electrical Engineering
Degree Granting Institution
University of Illinois at Urbana-Champaign
Degree Name
Ph.D.
Degree Level
Dissertation
Keyword(s)
Engineering, Electronics and Electrical
Language
eng
Abstract
In this work, water vapor oxidation of Al-bearing III--V semiconductors is employed to form high quality native oxides. The native oxides described are formed at temperatures in the range of 400$\sp\circ$C to 450$\sp\circ$C. Some of the basic properties of the oxide are first described. The properties include the insulating and diffusion masking nature of the oxide as well as its low index of refraction.
Device-quality insulating oxides are demonstrated in the $\rm Al\sb{x}Ga\sb{1-x}$As-GaAs and $\rm Al\sb{y}Ga\sb{1-y}$As-GaAs-$\rm In\sb{x}Ga\sb{1-x}As$ systems and are employed for current confinement in stripe-geometry gain guided laser diodes. The insulating properties and low refractive index (n $\sim$ 1.6) of AlGaAs native oxide are employed to fabricate single-longitudinal-mode planar native-oxide AlGaAs-GaAs quantum well heterostructure (QWH) laser diodes. This is done by patterning the stripes into a linear array. Data are also presented on the use of the native oxide to obtain switching and bistability with large hysteresis when fabricating laser diodes. Three-terminal bistable devices are examined. Finally, data are presented on the wavelength selectivity of the native oxide bistable devices.
Use this login method if you
don't
have an
@illinois.edu
email address.
(Oops, I do have one)
IDEALS migrated to a new platform on June 23, 2022. If you created
your account prior to this date, you will have to reset your password
using the forgot-password link below.
