Numerical modeling of electron cyclotron resonance plasma
Anghel, Vinicius Nicolae Petre
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https://hdl.handle.net/2142/20013
Description
Title
Numerical modeling of electron cyclotron resonance plasma
Author(s)
Anghel, Vinicius Nicolae Petre
Issue Date
1996
Doctoral Committee Chair(s)
Axford, Roy A.
Department of Study
Nuclear, Plasma, and Radiological Engineering
Discipline
Nuclear Engineering
Degree Granting Institution
University of Illinois at Urbana-Champaign
Degree Name
Ph.D.
Degree Level
Dissertation
Keyword(s)
Physics, Fluid and Plasma
Language
eng
Abstract
The semiconductor industry is introducing electron cyclotron resonance (ECR) plasma reactors as reliable wafer etching tools. This industry requires radially uniform etching rate and radially uniform etching anisotropy. The etching rate and etching anisotropy depend on the ECR plasma properties.
The magnetized plasma equations are solved along magnetic field lines in cylindrical geometry. Generalizing Guan et al. (1), the plasma equations on different field lines are coupled by ambipolar charged particle diffusion across magnetic field lines. Electrons and one ion species are considered to move in a neutral gas. The neutral gas density is given by a simple model. Electron impact ionization, ion-neutral and ion-ion elastic scattering, and ion-neutral charge exchange are taken into account.
"The magnetic field lines are traced in cylindrical geometry by solving the differential equations for field lines in terms of a definite integral. On each field line, the continuity, momentum, parallel and perpendicular energy equations for ions are solved using a shooting method. The neighborhoods of the boundary points are treated by an original numerical method for first-order systems of singular differential equations. The charged particle perpendicular leakage is evaluated by an original ""finite-difference"" method, by considering field lines instead of points."
The results of the computation show that the profile of the microwave power absorption is the dominant factor controlling the ion current on the wafer electrode. Varying divergence of the magnetic field lines improves the radial uniformity of the ion current, at the expense of decreasing it.
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