Carbon doping of compound semiconductor epitaxial layers grown by metalorganic chemical vapor deposition using carbon tetrachloride
Cunningham, Brian Thomas
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Permalink
https://hdl.handle.net/2142/20011
Description
Title
Carbon doping of compound semiconductor epitaxial layers grown by metalorganic chemical vapor deposition using carbon tetrachloride
Author(s)
Cunningham, Brian Thomas
Issue Date
1990
Doctoral Committee Chair(s)
Stillman, Gregory E.
Department of Study
Electrical and Computer Engineering
Discipline
Electrical and Computer Engineering
Degree Granting Institution
University of Illinois at Urbana-Champaign
Degree Name
Ph.D.
Degree Level
Dissertation
Keyword(s)
Chemistry, Organic
Engineering, Electronics and Electrical
Physics, Condensed Matter
Language
eng
Abstract
A dilute mixture of CCl$\sb4$ in high purity H$\sb2$ has been used as a carbon dopant source for $\rm Al\sb{x}Ga\sb{1-x}As$ grown by low pressure metalorganic chemical vapor deposition (MOCVD). To understand the mechanism for carbon incorporation from CCl$\sb4$ doping and to provide experimental parameters for the growth of carbon doped device structures, the effects of various crystal growth parameters on CCl$\sb4$ doping have been studied, including growth temperature, growth rate, V/III ratio, Al composition, and CCl$\sb4$ flow rate. Although CCl$\sb4$ is an effective p-type dopant for MOCVD $\rm Al\sb{x}Ga\sb{1-x}As$, injection of CCl$\sb4$ into the reactor during growth of InP resulted in no change in the carrier concentration or carbon concentration.
Abrupt, heavy carbon doping spikes in GaAs have been obtained using CCl$\sb4$ without a dopant memory effect. By annealing samples with carbon doping spikes grown within undoped, n-type, and p-type GaAs, the carbon diffusion coefficient in GaAs at 825$\sp\circ$C has been estimated and has been found to depend strongly on the GaAs background doping. Heavily carbon doped $\rm Al\sb{x}Ga\sb{1-x}As$/GaAs superlattices have been found to be more stable against impurity induced layer disordering (IILD) than Mg or Zn doped superlattices, indicating that the low carbon diffusion coefficient limits the IILD process.
Carbon doping has been used in the base region on an Npn AlGaAs/GaAs heterojunction bipolar transistor (HBT). Transistors with 3 x 10 $\mu$m self-aligned emitter fingers have been fabricated which exhibit a current gain cutoff frequency of f$\sb{\rm t}$ = 26 GHz.
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