Transmission electron microscopy investigation of ion implantation damage in gallium arsenide and other semiconductors

Bench, Michael Wayne

Permalink

https://hdl.handle.net/2142/19995 Copy

Description

Title

Transmission electron microscopy investigation of ion implantation damage in gallium arsenide and other semiconductors

Author(s)

Bench, Michael Wayne

Issue Date

1992

Doctoral Committee Chair(s)

Robertson, Ian M.

Department of Study

Materials Science and Engineering

Discipline

Materials Science and Engineering

Degree Granting Institution

University of Illinois at Urbana-Champaign

Degree Name

Ph.D.

Degree Level

Dissertation

Keyword(s)

• Physics, Condensed Matter
• Engineering, Materials Science

Language

eng

Abstract

• The crystalline-to-amorphous transition induced by ion implantation was investigated in GaAs and GaP using transmission electron microscopy. The experiments included those performed in situ using the HVEM-Tandem Accelerator Facility at Argonne National Laboratory and also those performed using high-resolution TEM. The implantations were made with Ar$\sp+$, Kr$\sp+$, Xe$\sp+$, and Au$\sp+$ ions (energy 50 or 80 keV) at 30 and 300 K. The high-resolution experiments confirmed the amorphous nature of the damage produced in individual displacement cascades. The in situ experiments at 30 K showed that amorphous zones are produced within isolated cascades with high probability. It was found that the efficiency of production of amorphous damage increases with increasing ion mass. The probability that an individual cascade will generate an amorphous region decreases when the implantation is performed at room temperature in GaAs but remains the same for GaP. Annealing experiments in the 30-300 K range demonstrated that there is significant damage recovery below 300 K in GaAs but none in GaP. Calculations of the energy density deposited in the cascades, determined through Monte-Carlo simulations, suggest that the formation and subsequent quenching of a molten zone may be responsible for the production of the amorphous damage.
• In addition to the experiments on damage production, electron beam induced recrystallization of isolated amorphous zones was investigated in GaAs, GaP, Si, and Ge. Regrowth was induced in all materials at electron energies below the threshold displacement energy. However, a minimum energy threshold was found only in Si. Results in the other three materials, particularly Ge, suggest that beam-induced ionization may be playing a role in the solid-phase epitaxial regrowth process in each of those materials.

Type of Resource

text

Permalink

http://hdl.handle.net/2142/19995

Copyright and License Information

Copyright 1992 Bench, Michael Wayne

Owning Collections