Surface-interface states and the Hall effect measurement of epitaxial and semi-insulating liquid-encapsulated Czochralski gallium arsenide
Miller, William Raymond
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https://hdl.handle.net/2142/19907
Description
Title
Surface-interface states and the Hall effect measurement of epitaxial and semi-insulating liquid-encapsulated Czochralski gallium arsenide
Author(s)
Miller, William Raymond
Issue Date
1991
Doctoral Committee Chair(s)
Stillman, Gregory E.
Department of Study
Electrical and Computer Engineering
Discipline
Electrical and Computer Engineering
Degree Granting Institution
University of Illinois at Urbana-Champaign
Degree Name
Ph.D.
Degree Level
Dissertation
Keyword(s)
Engineering, Electronics and Electrical
Physics, Condensed Matter
Language
eng
Abstract
"The effect of surface-potential changes on the Hall-effect measurement of n-type and p-type epitaxial GaAs and undoped and Cr-doped semi-insulating (SI) LEC GaAs has been studied. The surface-potential changes were induced by wet chemical treatments in ammonium hydroxide and hydrogen peroxide to modify the surface-interface state distribution. The experimental results for epitaxial GaAs are shown to be well-explained by a mathematical model based on the advanced unified defect (AUD) model of the surface-interface states. The same surface-interface state model has been used in a detailed theoretical model for surface effects, of a magnitude not previously reported in the literature, seen in SI LEC GaAs. The agreement between the theoretical results and experimental data provides strong support for the surface-interface state model used here, relative to a variety of other models proposed in the literature, and demonstrates its practicality as the first ""working"" mathematical model of surface-interface states in GaAs."
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