Characteristics of semiconductor optical waveguides fabricated by impurity-induced layer disordering
Swanson, Paul David
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https://hdl.handle.net/2142/19757
Description
Title
Characteristics of semiconductor optical waveguides fabricated by impurity-induced layer disordering
Author(s)
Swanson, Paul David
Issue Date
1989
Doctoral Committee Chair(s)
DeTemple, Thomas A.
Department of Study
Electrical and Computer Engineering
Discipline
Electrical Engineering
Degree Granting Institution
University of Illinois at Urbana-Champaign
Degree Name
Ph.D.
Degree Level
Dissertation
Keyword(s)
Engineering, Electronics and Electrical
Physics, Optics
Language
eng
Abstract
Impurity induced layer disorder-delineated buried channel optical waveguide non-rectilinear routing structures are found to have loss properties equal to or better than other planar optical waveguides. With 3 dB loss angles of 3$\sp\circ$, for simple abrupt bends, and 7$\sp\circ$, for modified abrupt bends, and 3 dB transition lengths of $\sim$300 $\mu$m for S bends with a 100 $\mu$m offset, these waveguides are capable of handling the routing requirements for many opto-electronic integrated circuit applications. A previously uncharacterized electro-absorption effect in a single quantum well graded barrier laser heterostructure was investigated as a means of providing electro-optic modulation and detection. This electroabsorption effect produced a change of over 100 cm$\sp{-1}$ in the modal absorption coefficient with less than a volt change in bias. Based on these findings, the feasibility of using a single heterostructure for the integration of multiple optical devices is addressed.
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