Growth, properties and electronic stability of DC magnetron reactive sputtered hydrogenated amorphous silicon thin films
Pinarbasi, Mustafa
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https://hdl.handle.net/2142/19494
Description
Title
Growth, properties and electronic stability of DC magnetron reactive sputtered hydrogenated amorphous silicon thin films
Author(s)
Pinarbasi, Mustafa
Issue Date
1989
Doctoral Committee Chair(s)
Kushner, Mark J.
Department of Study
Materials Science and Engineering
Discipline
Materials Engineering
Degree Granting Institution
University of Illinois at Urbana-Champaign
Degree Name
Ph.D.
Degree Level
Dissertation
Keyword(s)
Engineering, Materials Science
Language
eng
Abstract
Incorporation of hydrogen transforms pure amorphous silicon into a high quality electronic material through the passivation of unterminated silicon bonds in the amorphous silicon network. To date, most high quality hydrogenated amorphous silicon (a-Si:H) has been deposited by glow discharge decomposition of silane (SiH4). Reactive sputtering though, has a unique advantage over other deposition techniques; the hydrogen content of the film can be changed independently of the other deposition parameters by simply adjusting the hydrogen partial pressure in the discharge chamber. This capability enables us to study not only the properties of the films as a function of the total hydrogen content in the as deposited state but it can also be used to further our understanding of the light induced degradation (Staebler-Wronski) of the electronic properties of a-Si:H.
Earlier studies, however, indicated that device quality a-Si:H with properties comparable to glow discharge produced films could not be grown by reactive sputtering techniques. In this thesis device quality reactive magnetron sputtered a-Si:H films will be reported. These films can be used as photovoltaic solar cells, electrophotographic receptors and thin film transistors. The optimization of the deposition parameters will be discussed and physical properties of the films (microstructural, optical, and electronic) will be analyzed in terms of their total hydrogen content. The results of the first systematic study of Staebler-Wronski degradation of reactive sputtered films will also be reported. This systematic study identified the fundamental relationship between the total hydrogen content of the films and the Staebler-Wronski degradation. The study showed that the degradation of the electronic properties under light exposure for magnetron reactive sputtered films having high hydrogen content ($\sim$17 to 30 at%) is similar to that for the device quality glow discharge produced films. However, low hydrogen content reactive magnetron sputtered films (10 to 15 at%) are found to be superior against Staebler-Wronski degradation even though all the films are device quality in the as deposited state.
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