Fabrication of nanostructures with the scanning tunneling microscope and the laser
Yau, Siu-Tung
This item is only available for download by members of the University of Illinois community. Students, faculty, and staff at the U of I may log in with your NetID and password to view the item. If you are trying to access an Illinois-restricted dissertation or thesis, you can request a copy through your library's Inter-Library Loan office or purchase a copy directly from ProQuest.
Permalink
https://hdl.handle.net/2142/19396
Description
Title
Fabrication of nanostructures with the scanning tunneling microscope and the laser
Author(s)
Yau, Siu-Tung
Issue Date
1991
Doctoral Committee Chair(s)
Nayfeh, Munir H.
Department of Study
Electrical and Computer Engineering
Discipline
Electrical Engineering
Degree Granting Institution
University of Illinois at Urbana-Champaign
Degree Name
Ph.D.
Degree Level
Dissertation
Keyword(s)
Engineering, Electronics and Electrical
Language
eng
Abstract
A technique of making nanometer-scale structures on surfaces is developed. The technique combines two of the most advanced technologies: the laser and the scanning tunneling microscope (STM). Laser radiation is used to break the chemical bonds of gas-phase trimethylaluminum molecules to free aluminum atoms in the region of the tunneling gap of the STM. The atoms are subsequently selectively excited and ionized. The ions are then driven softly toward the surface where they are deposited by the field in the tunneling gap of the microscope. Deposits as small as 1nmx1nm were made on graphite substrates. The technique is also capable of addressable erasing.
The more familiar technique of using voltage pulses applied to the STM tunneling tip to fabricate nanostructures was also studied. Both deposits and holes were made. The voltage threshold and other features of the fabrication process were studied as a function of the tip-surface biasing voltage and the tunneling current. The studies show that the structures were formed by bombardment of the graphite surface by ions produced by electron-assisted field ionization localized in the region of the tunneling gap. This technique was combined with the STM-Laser technique to modify surfaces.
Use this login method if you
don't
have an
@illinois.edu
email address.
(Oops, I do have one)
IDEALS migrated to a new platform on June 23, 2022. If you created
your account prior to this date, you will have to reset your password
using the forgot-password link below.
