University of Illinois Urbana-Champaign

Stress and structure of silicon surfaces

Twesten, Ray Dudley

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https://hdl.handle.net/2142/19392

Description

Title
Stress and structure of silicon surfaces
Author(s)
Twesten, Ray Dudley
Issue Date
1995
Doctoral Committee Chair(s)
Gibson, J. Murray
Department of Study
Physics
Discipline
Physics
Degree Granting Institution
University of Illinois at Urbana-Champaign
Degree Name
Ph.D.
Degree Level
Dissertation
Keyword(s)
  • Engineering, Electronics and Electrical
  • Physics, Condensed Matter
Language
eng
Abstract
"It is well-known that a surface's structure affects its properties; the effect of a surface's intrinsic stress, however, is less widely known but just as important. Using the novel technique of ultra-high vacuum transmission electron microscopy, I have investigated both the structure and the stress of the Silicon (111) surface. The kinematic analysis of electron diffraction data was used to determine the positions of the surface atoms of the Si(111)-7x7 reconstruction. Even under the seemingly drastic kinematic approximation, the atomic positions determined were in excellent agreement with those determined by x-ray diffraction. The relation of stress to structure is revealed in the 7x7 to ""1x1"" phase transition on the Si(111) surface. While only a small amount of stress is relieved in the transition, it is clearly measurable, with a value of 30meV/A$\sp2$. This value is consistent with the disordered adatom model for ""1x1"" surface."
Type of Resource
text
Permalink
http://hdl.handle.net/2142/19392
Copyright and License Information
Copyright 1995 Twesten, Ray Dudley

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