Residual lattice defects in silicon(100) films doped with low-energy positive boron and positive arsenic ions during growth by molecular-beam epitaxy: Variation with ion energy and growth temperature
Noel, Jean-Paul Francis
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https://hdl.handle.net/2142/19075
Description
Title
Residual lattice defects in silicon(100) films doped with low-energy positive boron and positive arsenic ions during growth by molecular-beam epitaxy: Variation with ion energy and growth temperature
Author(s)
Noel, Jean-Paul Francis
Issue Date
1990
Doctoral Committee Chair(s)
Greene, Joseph E.
Department of Study
Materials Science and Engineering
Discipline
Materials Science and Engineering
Degree Granting Institution
University of Illinois at Urbana-Champaign
Degree Name
Ph.D.
Degree Level
Dissertation
Keyword(s)
Physics, Condensed Matter
Engineering, Materials Science
Language
eng
Abstract
Si(100) films were doped with 100, 200, 500, and 1000 eV $\sp{11}$B$\sp+$ and $\sp{75}$As$\sp+$ ions during growth by molecular-beam epitaxy (MBE) at temperatures of 800, 650, and 500 $\sp\circ$C. Photoluminescence (PL) and deep level transient spectroscopy (DLTS) were used to assess optical and electronic film quality by identifying and measuring concentrations of ion-induced and inherent residual lattice defects. Bulk-like PL spectra containing sharp, intense, dopant bound-exciton (BE) peaks were consistently obtained from films grown at the highest temperature and lowest ion energy, and no majority-carrier traps were detected by DLTS. For B$\sp+$ ion doping, decreasing the growth temperature from 800$\sp\circ$C or increasing the ion energy from 100 eV caused a suppression in the intensity of sharp, B-BE PL peaks, with an accompanying increase in the concentration of residual lattice defects. In contrast, intensities of As-BE PL peaks from As$\sp+$ ion doped films were relatively constant for growth temperatures $\sb-$650$\sp\circ$C irrespective of ion energy. Ion doping with either B$\sp+$ or As$\sp+$ during growth at 500$\sp\circ$C resulted in films whose PL spectra showed no appreciable BE luminescence and a large background signal at low PL energies. The latter feature was also observed in films grown at 500$\sp\circ$C without ion doping and suggested an inherent limitation of MBE-grown Si at this temperature and a rate of 2 m h$\sp{-1}$. DLTS majority carrier trap concentrations in films grown at 500$\sp\circ$C varied between 2 $\times$ 10$\sp{14}$ cm$\sp{-3}$ and 5 $\times$ 10$\sp{17}$ cm$\sp{-3}$ for 200 and 1000 eV As$\sp+$ ion doping, respectively.
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