Surface and interface studies of compound semiconductors
Franklin, Gregg Edward
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https://hdl.handle.net/2142/18906
Description
Title
Surface and interface studies of compound semiconductors
Author(s)
Franklin, Gregg Edward
Issue Date
1992
Doctoral Committee Chair(s)
Chiang, Tai-Chang
Department of Study
Physics
Discipline
Physics
Degree Name
Ph.D.
Degree Level
Dissertation
Keyword(s)
semiconductors
compound semiconductors
geometric properties
electronic properties
electron diffraction
x-ray diffraction
auger spectroscopy
synchrontron photoemission
scanning tunneling microscope (STM)
Language
en
Abstract
The geometric and electronic properties of compound semiconductor surfaces and
interfaces were studied using experimental techniques such as electron and x-ray
diffraction, Auger spectroscopy, synchrotron photoemission, and scanning tunneling
microscopy. Some of the surface and interfacial properties this thesis is concerned with
include clean and adsorbate-induced reconstructions, valence-band discontinuities and
Schottky-barrier formations, doping and metallization, work function changes and
growth considerations.
Experiments were performed on the Sb-stabilized GaSb(lOO)-(lx3) surface
grown by molecular beam epitaxy. Bulk valence bands were mapped out in the r-8-X
direction. The deconvoluted Sb-4d and Ga-3d core-level line shapes were used to
construct a structural model for the surface. STM resolved the individual atomic dimers
verifying the proposed model and showed partial disorder inherent on this surface.
The interaction of the clean GaSb(lOO) surface with ZnTe, a strain-free (i.e.
highly lattice-matched) system, was explored using synchrotron photoemission. The
deconvoluted core-level line shapes were used to construct structural models for the
interface between these compound semiconductors in both the high and lowtemperature
growth phases. In addition, the movement of the valence band and Fermi
level was used to examine the heterojunction band offset for the low-temperature phase
and the dopant incorporation for the high-temperature phase.
The interface between an alkali metal, cesium, and the clean GaSb(lOO) surface
was investigated up to its saturation limit. The work function change was measured
and the Fermi level movement determined the degree of surface metallicity. Core level
line shapes were used to determine surface structure as well as the degree of charge
transfer.
Finally, the interface formation and subsequent growth of InSb on vicinal ( 4 ° off)
and on-axis Si(lOO), a strained system (i.e. highly lattice-mismatched), was studied.
During the initial stages of molecular beam epitaxy at 41 ooc we examined the In, Sb,
and Si core levels as a function of In and Sb coverage and deposition order. Based on
these results a model for interface formation was developed. Thicker coverage results
of co-evaporated InSb are discussed in light of the interfacial analyses.
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