Process Development for High Speed Transistor Laser Operation
James, Adam L.
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https://hdl.handle.net/2142/18567
Description
Title
Process Development for High Speed Transistor Laser Operation
Author(s)
James, Adam L.
Issue Date
2011-01-21T22:46:49Z
Director of Research (if dissertation) or Advisor (if thesis)
Feng, Milton
Doctoral Committee Chair(s)
Feng, Milton
Committee Member(s)
Holonyak, Nick, Jr.
Jin, Jianming
Schutt-Ainé, José E.
Department of Study
Electrical & Computer Eng
Discipline
Electrical & Computer Engr
Degree Granting Institution
University of Illinois at Urbana-Champaign
Degree Name
Ph.D.
Degree Level
Dissertation
Keyword(s)
Transistor Laser
Abstract
The transistor laser (TL) o ers advantages over conventional diode laser structure. The TL
uses high base doping and minority carrier collection to reduce the recombination lifetime
in the active region of the device to <30 ps. A fast recombination lifetime <30 ps reduces
the photon-carrier resonance when modulating the device at RF frequencies. However,
the transistor laser with high intrinsic optical speed is limited by more than just internal
recombination lifetime; it is also limited by parasitic resistances and capacitances. Small
signal bandwidth of 20 GHz and digital modulation of 20 Gbit/s was obtained by reducing
or eliminating extrinsic parasitics which limit device performance through the optimization
of device geometry and process conditions.
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