Modification of an ultra-high-vacuum scanning tunneling microscope for silicon nanostructure fabrication
Zhang, Fan
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https://hdl.handle.net/2142/18461
Description
Title
Modification of an ultra-high-vacuum scanning tunneling microscope for silicon nanostructure fabrication
Author(s)
Zhang, Fan
Issue Date
2011-01-14T22:51:36Z
Director of Research (if dissertation) or Advisor (if thesis)
Lyding, Joseph W.
Department of Study
Electrical & Computer Eng
Discipline
Electrical & Computer Engr
Degree Granting Institution
University of Illinois at Urbana-Champaign
Degree Name
M.S.
Degree Level
Thesis
Keyword(s)
scanning tunneling microscope (STM)
silicon
nanostrucuture
Abstract
In this thesis, two major modifications to an ultra-high-vacuum scanning tunneling microscope system are described: an update to the cooling plate structure for more effective cooling of the dipstick and sample holder, and the installation of a capillary doser for concentrating the precursor gas to the tip-ample junction during silicon nanostructure
growth. The updated cooling plate is able to shorten the total sample preparation time from 6 hours to 3 hours. The capillary doser lowers the base pressure during the silicon growth experiment by two orders of magnitude. The system operation after the system modification was tested. The system is now ready for subsequent silicon nanostructure growth using disilane gas.
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