Material characterization and process development for indium-arsenide / indium-gallium-antimonide channel, high electron mobility transistors for low power, high speed applications
Bambery, Rohan
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https://hdl.handle.net/2142/18297
Description
Title
Material characterization and process development for indium-arsenide / indium-gallium-antimonide channel, high electron mobility transistors for low power, high speed applications
Author(s)
Bambery, Rohan
Issue Date
2011-01-14T22:45:18Z
Director of Research (if dissertation) or Advisor (if thesis)
Feng, Milton
Department of Study
Electrical & Computer Eng
Discipline
Electrical & Computer Engr
Degree Granting Institution
University of Illinois at Urbana-Champaign
Degree Name
M.S.
Degree Level
Thesis
Keyword(s)
High Electron Mobility Transistor (HEMT)
Aluminium Antimonide (AlSb)
Indium Arsenide (InAs)
Abstract
Efforts to push the performance of transistors for millimeter-wave and microwave
applications have borne fruit through device size scaling and the use of novel material
systems. III-V semiconductors and their alloys hold a distinct advantage over silicon
because they have much higher electron mobility which is a prerequisite for high frequency
operation. InGaAs/InP pseudomorphic heterojunction bipolar transistors (HBTs) have
demonstrated fT of 765 GHz at room temperature and InP based high electron
mobility transistors (HEMTs) have demonstrated fMax of 1.2 THz. The 6.1 A lattice
family of InAs, GaSb, AlSb covers a wide variety of band gaps and is an attractive future
material system for high speed device development. Extremely high electron
mobilities ~ 30,000 cm^2 V^-1s^-1 have been achieved in modulation
doped InAs-AlSb structures. The work described in this thesis involves material
characterization and process development for HEMT fabrication on this material system.
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