University of Illinois Urbana-Champaign

Ultra-low power phase change memory with carbon nanotube interconnects

Xiong, Feng

Content Files
Xiong_Feng.pdf

Permalink

https://hdl.handle.net/2142/16782

Description

Title
Ultra-low power phase change memory with carbon nanotube interconnects
Author(s)
Xiong, Feng
Issue Date
2010-08-20T17:57:43Z
Director of Research (if dissertation) or Advisor (if thesis)
Pop, Eric
Department of Study
Electrical & Computer Eng
Discipline
Electrical & Computer Engr
Degree Granting Institution
University of Illinois at Urbana-Champaign
Degree Name
M.S.
Degree Level
Thesis
Date of Ingest
2010-08-20T17:57:43Z
Keyword(s)
  • phase change memory
  • GeSbTe (GST)
  • chalcogenide
  • carbon nanotubes
  • finite element modeling
  • COMSOL
Abstract
Phase change memory (PCM) is a promising candidate for the next-generation non-volatile data storage, though its high programming current has been a major concern. By utilizing carbon nanotubes (CNTs) as interconnects to induce phase change in ultra small regions of Ge2Sb2Te5 (GST), we are able to lower the programming current to less than 10 μA, almost two orders of magnitude less than state-of-the-art PCM devices. Normal memory operations of the nanotube-PCM device are demonstrated using pulse measurements with exceptionally low current and power consumption. Electrical characterizations show that the switching voltage in nanotube-PCM devices is highly scalable.
Graduation Semester
2010-08
Permalink
http://hdl.handle.net/2142/16782
Copyright and License Information
Copyright 2010 Feng Xiong

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