Ultra-low power phase change memory with carbon nanotube interconnects
Xiong, Feng
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https://hdl.handle.net/2142/16782
Description
Title
Ultra-low power phase change memory with carbon nanotube interconnects
Author(s)
Xiong, Feng
Issue Date
2010-08-20T17:57:43Z
Director of Research (if dissertation) or Advisor (if thesis)
Pop, Eric
Department of Study
Electrical & Computer Eng
Discipline
Electrical & Computer Engr
Degree Granting Institution
University of Illinois at Urbana-Champaign
Degree Name
M.S.
Degree Level
Thesis
Keyword(s)
phase change memory
GeSbTe (GST)
chalcogenide
carbon nanotubes
finite element modeling
COMSOL
Abstract
Phase change memory (PCM) is a promising candidate for the next-generation non-volatile data storage, though its high programming current has been a major concern. By utilizing carbon nanotubes (CNTs) as interconnects to induce phase change in ultra small regions of Ge2Sb2Te5 (GST), we are able to lower the programming current to less than 10 μA, almost two orders of magnitude less than state-of-the-art PCM devices. Normal memory operations of the nanotube-PCM device are demonstrated using pulse measurements with exceptionally low current and power consumption. Electrical characterizations show that the switching voltage in nanotube-PCM devices is highly scalable.
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