Current oscillations in long Zn doped Si p-i-n diodes
Blouke, Morley Matthews
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https://hdl.handle.net/2142/16595
Description
Title
Current oscillations in long Zn doped Si p-i-n diodes
Author(s)
Blouke, Morley Matthews
Issue Date
1969
Department of Study
Physics
Discipline
Physics
Degree Name
Ph.D.
Degree Level
Dissertation
Keyword(s)
p-i-n diodes
Language
en
Abstract
Long Zn-doped Si p-i-n diodes exhibit large amplitude, sinusoidal, current oscillations in the positive resistance position of the I-V characteristic. These oscillations occur in the temperature range from ~150oK to ~2l0 oK. Over this temperature range, the frequency of oscillation varies nearly three orders of magnitude, from ~1 kHz to ~ 1MHz.
Preceding the oscillations, these devices exhibit two-carrier space-change-limited conduction typical of long p-i-n diodes. This is interpreted in terms of the cube-law injected plasma theory of Lampert and Rose. It is shown that the critical parameter for the initiation of the oscillations is the presence of a minimum free carrier concentration in the intrinsic region.
The solid solubility of Zn in Si is extended nearly two orders of magnitude over that previously known, to include the temperature range 800 o C to 1000 o C.
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