Antimony-based type-II superlattice infrared detectors

Mandl, Martin

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https://hdl.handle.net/2142/16201 Copy

Description

Title

Antimony-based type-II superlattice infrared detectors

Author(s)

Mandl, Martin

Issue Date

2010-05-19T18:40:28Z

Director of Research (if dissertation) or Advisor (if thesis)

Chuang, Shun-Lien

Department of Study

Electrical & Computer Eng

Discipline

Electrical & Computer Engr

Degree Granting Institution

University of Illinois at Urbana-Champaign

Degree Name

M.S.

Degree Level

Thesis

Keyword(s)

• Infrared Detector
• type-II superlattice (T2SL)
• InAs/GaSb T2SL
• Metalorganic vapor deposition (MOCVD)
• interband tunneling detector

Abstract

Numerous applications within the mid- and long-wavelength infrared are driving the search for efficient and cost effective detection technologies in this regime. Theoretical calculations have predicted high performance for InAs/GaSb type-II superlattice structures, which rely on mature growth of III-V semiconductors and offer many levels of freedom in design due to band structure engineering. This work focuses on the fabrication and characterization of type-II superlattice infrared detectors. Standard UV-based photolithography was used combined with chemical wet or dry etching techniques in order to fabricate antinomy-based type-II superlattice infrared detectors. Subsequently, Fourier transform infrared spectroscopy and radiometric techniques were applied for optical characterization in order to obtain a detector's spectrum and response, as well as the overall detectivity in combination with electrical characterization. Temperature dependent electrical characterization was used to extract information about the limiting dark current processes. This work resulted in the first demonstration of an InAs/GaSb type-II superlattice infrared photodetector grown by metalorganic chemical vapor deposition. A peak detectivity of 1.6x10^9 Jones at 78 K was achieved for this device with a 11 micrometer zero cutoff wavelength. Furthermore the interband tunneling detector designed for the mid-wavelength infrared regime was studied. Similar results to those previously published were obtained.

Graduation Semester

2010-5

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http://hdl.handle.net/2142/16201

Copyright and License Information

Copyright 2010 Martin Mandl

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