Engineering strain-induced self-rolling semiconductor tubes through geometry and patterning
Challa, Archana
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https://hdl.handle.net/2142/16181
Description
Title
Engineering strain-induced self-rolling semiconductor tubes through geometry and patterning
Author(s)
Challa, Archana
Issue Date
2010-05-19T18:39:58Z
Director of Research (if dissertation) or Advisor (if thesis)
Li, Xiuling
Department of Study
Electrical & Computer Eng
Discipline
Electrical & Computer Engr
Degree Granting Institution
University of Illinois at Urbana-Champaign
Degree Name
M.S.
Degree Level
Thesis
Keyword(s)
semiconductor nanotubes
strain induced
compound semiconductors
Abstract
This thesis investigates the effect of the geometry of the strained bilayer mesa on the physical shape of semiconductor nanotubes, which is essential for precise positioning and uniform large area assembly. Experimental and simulation results of the rolling behavior of tubes are discussed for various geometries. The study attempts to understand the energy minimization process of strained heterofilms at the nanoscale level and to successfully interpret these phenomena for design and control of semiconductor nanotubes. Generally, III-V compound semiconductor tubes tend to roll up along the length of the mesa due to the lowest energy associated with the state in contrast to short side or mixed rolling behavior. However, the configuration of tubes can be modified by engineering the mesa geometry through additional patterning. Possible applications of new structures and devices obtained through semiconductor nanotubes are considered.
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