Simulation of implantation and diffusion processes for electro-thermal microcantilevers

Bhatia, Bikramjit

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https://hdl.handle.net/2142/16150 Copy

Description

Title

Simulation of implantation and diffusion processes for electro-thermal microcantilevers

Author(s)

Bhatia, Bikramjit

Issue Date

2010-05-19T18:39:00Z

Director of Research (if dissertation) or Advisor (if thesis)

King, William P.

Department of Study

Mechanical Sci & Engineering

Discipline

Mechanical Engineering

Degree Granting Institution

University of Illinois at Urbana-Champaign

Degree Name

M.S.

Degree Level

Thesis

Keyword(s)

• Atomic Force Microscope (AFM)
• Electro-Thermal Microcantilevers
• Implantation and Diffusion

Abstract

Atomic Force Microscope (AFM) compatible electro-thermal microcantilevers, capable of independently controlling cantilever temperature and electrical potential/current flow through the end of the tip, are proposed and designed. An important characteristic of these probes is the spatial dopant distribution that gives these devices the required electrical and thermal functionality. In this work, we have identified the design goals for these probes and determine the corresponding implantation and diffusion parameters for the doping steps. We used a two-dimensional model to simulate the process steps for doping different regions of the electro-thermal probe using DIOS, a multidimensional process simulator in the TCAD suite. Each cantilever probe consists of three legs – two of the legs are heavily doped to carry electrical current, with a low doped resistive heater at the cantilever free end, and the third leg, which is either heavily doped or made of metal coated silicon, is used to bias the tip. Based on the arrangement used to separate the electrical path from the heating circuit, three basic designs were developed - the “diode-type”, “transistor-type” and “metal-coated-electrode-leg-type”. Simulation geometries representative of the two kinds of p-n junctions in the “transistor” or the back-to-back diode configuration are used for doping simulations. Antimony (Sb) and Boron (B) were used as the respective n- and p-type doping species. The implantation and diffusion parameters were optimized to obtain the desired dopant profiles.

Graduation Semester

2010-5

Permalink

http://hdl.handle.net/2142/16150

Copyright and License Information

Copyright 2010 Bikramjit S. Bhatia

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