Defect engineering of metal oxide semiconductors

Noh, Kyong Wook

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https://hdl.handle.net/2142/15964 Copy

Description

Title

Defect engineering of metal oxide semiconductors

Author(s)

Noh, Kyong Wook

Issue Date

2010-05-18T18:52:53Z

Director of Research (if dissertation) or Advisor (if thesis)

Seebauer, Edmund G.

Department of Study

Chemical & Biomolecular Engr

Discipline

Chemical Engineering

Degree Granting Institution

University of Illinois at Urbana-Champaign

Degree Name

M.S.

Degree Level

Thesis

Keyword(s)

• Semiconductors
• Defect Engineering
• Metal Oxide
• Titania
• Titanium Dioxide

Abstract

Defects in semiconductors have been studied for many years, with a view toward controlling their behavior through various forms of defect engineering. In the Si-based microelectronics industry, numerous methods to characterize and control the behavior of defects have been developed, including novel techniques such as co-implantation, millisecond annealing, photostimulation and surface engineering. Closely related, yet unique defect engineering efforts have also been made for non-Si based microelectronic applications as well. The accumulated knowledge stemmed from microelectronics should also be able to be extended to metal oxide semiconductors, where promising applications (e.g., gas sensors and photocatalysts) are gaining increased interest. In particular, the use of surface engineering has been extended to titanium dioxide, opening up new possibilities of defect control. For further investigation of these effects, sulfur has been chosen as a surface controlling adsorbate, which can be used to manipulate the surface states. The successful deposition of the element through electrochemical means has been demonstrated on silicon and titanium dioxide substrates. In addition, experimental and computational studies on the behavior of the cation species in titanium dioxide using isotopic tracers have also been carried out, with an emphasis on the effect of surface states. It follows that the surface state can indeed influence the cation defect behaviors in a significant manner, which in turn affects the self-diffusion profiles.

Graduation Semester

2010-5

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http://hdl.handle.net/2142/15964

Copyright and License Information

Copyright 2010 Kyong Wook Noh

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