Characteristics, Theory and Modeling of the Transistor Laser

Then, Han Wui

Permalink

https://hdl.handle.net/2142/14740 Copy

Description

Title

Characteristics, Theory and Modeling of the Transistor Laser

Author(s)

Then, Han Wui

Issue Date

2010-01-06T17:48:34Z

Director of Research (if dissertation) or Advisor (if thesis)

Feng, Milton

Doctoral Committee Chair(s)

Feng, Milton

Committee Member(s)

• Holonyak, Nick, Jr.
• Cheng, Keh-Yung
• Jin, Jianming
• Hsieh, Kuang-Chien

Department of Study

Electrical & Computer Eng

Discipline

Electrical & Computer Engr

Degree Granting Institution

University of Illinois at Urbana-Champaign

Degree Name

Ph.D.

Degree Level

Dissertation

Keyword(s)

• transistor laser
• light-emitting transistor
• Heterojunction Bipolar Transistor (HBT)
• Diode Laser
• Quantum Well
• differential gain
• recombination
• current gain
• tunnel junction

Abstract

The transistor laser possesses advantageous characteristics of fast base spontaneous carrier lifetime, high differential optical gain, and unique three-terminal electrical-optical characteristics for direct “read-out” of its optical properties. These potentially lead to advantageous and useful features for designing high-speed optical transmitters that operate without the limitations of resonance, a feature common in the operation of semiconductor (two-terminal) diode lasers. The characteristics of the transistor laser are studied by considering the charge transport, and the coupling of the photon and quantum-mechanical electron-hole recombination dynamics in the operation of the transistor laser. An analytical understanding of these physical characteristics is developed based on experimental data, and a computational model of the transistor laser is developed for device engineering and circuit design applications.

Graduation Semester

2009-12

Permalink

http://hdl.handle.net/2142/14740

Copyright and License Information

Copyright 2009 Han Wui Then

Owning Collections