Growth and Characterization of III-V Semiconductor Materials for MOCVD Reactor Qualification and Process Control
Bassett, Kevin P.
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https://hdl.handle.net/2142/14733
Description
Title
Growth and Characterization of III-V Semiconductor Materials for MOCVD Reactor Qualification and Process Control
Author(s)
Bassett, Kevin P.
Issue Date
2010-01-06T16:42:06Z
Director of Research (if dissertation) or Advisor (if thesis)
Li, Xiuling
Doctoral Committee Chair(s)
Li, Xiuling
Department of Study
Electrical & Computer Eng
Discipline
Electrical & Computer Engr
Degree Granting Institution
University of Illinois at Urbana-Champaign
Degree Name
M.S.
Degree Level
Thesis
Keyword(s)
Metal-organic chemical vapor deposition (MOCVD)
Organometallic vapor phase epitaxy (OMVPE)
Metalorganic vapour phase epitaxy (MOVPE)
Abstract
Metalorganic chemical vapor deposition is examined as a technique for growing compound semiconductor structures. Material analysis techniques for characterizing the quality and properties of compound semiconductor material are explained and data from recent commissioning work on a newly installed reactor at the University of Illinois is presented.
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