Fluidic characterization of electric field sensitivity of Ti-GaAs Schottky junction gated field-effect biosensors
Suk, Ho-Jun
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https://hdl.handle.net/2142/14677
Description
Title
Fluidic characterization of electric field sensitivity of Ti-GaAs Schottky junction gated field-effect biosensors
Author(s)
Suk, Ho-Jun
Issue Date
2010-01-06T16:21:05Z
Director of Research (if dissertation) or Advisor (if thesis)
Bashir, Rashid
Doctoral Committee Chair(s)
Bashir, Rashid
Department of Study
Electrical & Computer Eng
Discipline
Electrical & Computer Engr
Degree Granting Institution
University of Illinois at Urbana-Champaign
Degree Name
M.S.
Degree Level
Thesis
Keyword(s)
Metal semiconductor hybrid
biosensor
electric field sensing
Schottky junction
Abstract
This thesis reports the electric field sensitivity of fluid gated metalsemiconductor hybrid (MSH) Schottky structures consisting of a Titanium layer on ntype GaAs. Compared to standard field-effect sensors, the MSH Schottky structures show 21 times larger resistance change with electric field at -46.6 V/cm. The fluidic gate voltages are mirrored by the metal shunt, resulting in larger depletion widths under the Schottky junction and resistance change as compared to devices with no Schottky junction. Two-dimensional numerical simulation results are in good agreement with the measured data, and a thinner mesa with lower doping density can further increase sensor sensitivity. These metal-semiconductor hybrid (MSH) Schottky sensors are thus very promising for label-free biosensing.
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