Growth and characterization of III-V compound semiconductor nanostructures by metalorganic chemical vapor deposition

Dowdy, Ryan S.

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https://hdl.handle.net/2142/14672 Copy

Description

Title

Growth and characterization of III-V compound semiconductor nanostructures by metalorganic chemical vapor deposition

Author(s)

Dowdy, Ryan S.

Issue Date

2010-01-06T16:20:58Z

Director of Research (if dissertation) or Advisor (if thesis)

Li, Xiuling

Doctoral Committee Chair(s)

Li, Xiuling

Department of Study

Electrical & Computer Eng

Discipline

Electrical & Computer Engr

Degree Granting Institution

University of Illinois at Urbana-Champaign

Degree Name

M.S.

Degree Level

Thesis

Keyword(s)

• nanowire
• Vapor-liquid-solid (VLS)
• III-V
• quantum dot
• gaas
• offcut
• suspended
• zinc
• Indium Arsenide (InAs)
• nanostructure
• movpe
• mocvd

Abstract

Planar <110> GaAs nanowires and quantum dots grown by atmospheric MOCVD have been introduced to non-standard growth conditions such as incorporating Zn and growing them on free-standing suspended films and on 10° off-cut substrates. Zn doped nanowires exhibited periodic notching along the axis of the wire that is dependent on Zn/Ga gas phase molar ratios. Planar nanowires grown on suspended thin films give insight into the mobility of the seed particle and change in growth direction. Nanowires that were grown on the off-cut sample exhibit anti-parallel growth direction changes. Quantum dots are grown on suspended thin films and show preferential growth at certain temperatures. Envisioned nanowire applications include twin-plane superlattices, axial pn-junctions, nanowire lasers, and the modulation of nanowire growth direction against an impeding barrier and varying substrate conditions.

Graduation Semester

2009-12

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http://hdl.handle.net/2142/14672

Copyright and License Information

Copyright 2009 Ryan S. Dowdy

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