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Advanced process development for contacts to algan/gan high electron mobility transistors (HEMTS)
Ofuonye, Benedict Chukwuka
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https://hdl.handle.net/2142/14559
Description
- Title
- Advanced process development for contacts to algan/gan high electron mobility transistors (HEMTS)
- Author(s)
- Ofuonye, Benedict Chukwuka
- Issue Date
- 2010-01-06T16:12:07Z
- Director of Research (if dissertation) or Advisor (if thesis)
- Adesida, Ilesanmi
- Doctoral Committee Chair(s)
- Adesida, Ilesanmi
- Committee Member(s)
- Schutt-Ainé, José E.
- Hsieh, Kuang-Chien
- Ravaioli, Umberto
- Department of Study
- Electrical & Computer Eng
- Discipline
- Electrical & Computer Engr
- Degree Granting Institution
- University of Illinois at Urbana-Champaign
- Degree Name
- Ph.D.
- Degree Level
- Dissertation
- Date of Ingest
- 2010-01-06T16:12:07Z
- Keyword(s)
- AlGaN/GAN
- Implantation
- Contacts
- Schottky
- Ohmic
- Thermal Annealing
- Stability
- Self-aligned
- Gallium Nitride (GaN)
- Activation
- Selective-Area
- Metallization
- Abstract
- High work function metals--Ni, Pt, Ir, and Au--were comparatively studied as Schottky metallizations to GaN and AlGaN/GaN heterostructures. Ni/Au, Ni/Pt/Au, Ir/Au, Ir/Pt/Au and Pt/Au Schottky diodes were fabricated on GaN and AlGaN/GaN substrates. Schottky barrier heights ranging from 0.8 to 0.9 eV were obtained as-deposited on GaN with ideality factors of about 1.05. The quality of the Schottky diodes was evaluated and their thermal stability also was studied. The interposition of Pt in Ni/Au and Ir/Au systems was found to improve the characteristics of the Schottky diodes. Ir/Pt/Au diodes were found to be more thermally stable than Ni/Pt/Au diodes. Ni/Au Schottky contacts exhibited good leakage response under thermal annealing for long periods. Microstructural studies were carried out on Ni/Pt/Au and Ni/Au Schottky contacts to elucidate the role of the intermediate layer, Pt, in the degradation of the Ni/Pt/Au metallization under long-term thermal anneal. A selective-area silicon ion implantation process for ohmic contact resistance improvement to AlGaN/GaN high electron mobility transistors (HEMTs) was developed. Non-alloyed ohmic contacts with very low contact resistances of 0.2 - 0.24 -mm were achieved with TLM pads fabricated using the Mo/Al/Mo/Au metallization. Simulations were carried out with SRIM to qualify the implantation process. Surface chemistry analysis was undertaken on the implanted AlGaN/GaN and GaN samples to determine the impact of implantation on the surface morphology of the AlGaN layer. The developed ion-implantation process was used to propose fabrication schemes for novel high speed self-aligned and non-self-aligned AlGaN/GaN high electron mobility trasistors (HEMTs) employing Ir/Pt/Au or Ni/Au gate and non-alloyed ohmic contact metallizations.
- Graduation Semester
- 2009-12
- Permalink
- http://hdl.handle.net/2142/14559
- Copyright and License Information
- copyright 2009 Benedict Chukwuka Ofuonye
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Graduate Dissertations and Theses at Illinois PRIMARY
Graduate Theses and Dissertations at IllinoisDissertations and Theses - Electrical and Computer Engineering
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