INVESTIGATION OF THE STT-MTJ SWITCHING BEHAVIOR USING A SPICE COMPACT MODEL

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https://hdl.handle.net/2142/124889

Title: INVESTIGATION OF THE STT-MTJ SWITCHING BEHAVIOR USING A SPICE COMPACT MODEL
Author(s): Chen, Ziyan
Issue Date: 2022-05-01
Keyword(s): Magneto-resistive random-access memory (MRAM), physics of the spintronic device
Abstract: Magneto-resistive random-access memory (MRAM) is a promising candidate for the next generation of non-volatile non-destructive memory with the merits of low power and high density. With one transistor to one magnetic tunnel junction (1T-1MTJ) structure, MRAM achieves a higher packaging density than conventional 6-transistor SRAM. Spin-Transfer Torque Magnetic Tunnel Junction (STT-MTJ) manipulating magnetization using spin-polarized current allows lower power and higher scalability than traditional MRAM. In this thesis, the fundamental physics of the spintronic device based on the Landau-Lifshitz-Gilbert (LLG) equation is studied. A stochastic switching time model is used to understand the relationship between input pulse amplitude, latency, switching energy, and stability. A SPICE compact model solving the LLG equation in cartesian coordinates is simulated and verified to understand the MTJ switching dynamics. Modification to solve the LLG equation in spherical coordinates shows higher accuracy with Python simulation. The SPICE compact model is also applied in a circuit design to mimic the switching behavior in the actual circuit.
Type of Resource: text
Language: eng

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