MODELLING AND SIMULATING VOLTAGE CONTROLLED MAGNETIC ANISOTROPY MAGNETIC MEMORY DEVICES

Zhu, Wilson

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https://hdl.handle.net/2142/124867 Copy

Description

Title

MODELLING AND SIMULATING VOLTAGE CONTROLLED MAGNETIC ANISOTROPY MAGNETIC MEMORY DEVICES

Author(s)

Zhu, Wilson

Issue Date

2022-05-01

Keyword(s)

Circuits and Systems; Circuit Simulation; Magnetic Circuits; Magnetic Memory; Spintronics

Abstract

Magnetoresistive random access memory (MRAM) devices offer non-volatile memory storage due to them storing bits with magnetic spin instead of with electrical charge, meaning they can offer long term digital memory storage without leaking energy while idle. This is potentially a huge advantage as digital technology continues to include increasing numbers of transistors. Furthermore, MRAM is a very promising solution that can replace long memory storage devices such as NAND flash memories, and can potentially become a universal memory that replaces DRAM and even SRAM due to its comparable dynamic power consumption and its ability to be interfaced with silicon fabrication methods and materials. Both theoretical and experimental research in the area of magnets has already proven the viability of MRAM in Spin transfer torque (STT) MRAM devices, which already have on the market options for commercial use. Another type of MRAM known as voltage controlled magnetic anisotropy (VCMA) can be used as an extension to STT devices that can lower dynamic energy consumption even further while providing faster switching times. In this thesis I first summarize the basic magnetic theory necessary to understand VCMA devices. I then describe the basics of STT devices and the currently most accepted theory behind VCMA devices, where research is still ongoing. I conclude with simulations of a singular VCMA memory device during its write process of switching a zero bit to a one bit and vice versa through Python.

Type of Resource

text

Language

eng

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