University of Illinois Urbana-Champaign

Growth of lattice-mismatched iii-phosphide optoelectronic devices by molecular beam epitaxy

Kim, Mijung

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https://hdl.handle.net/2142/122257

Description

Title
Growth of lattice-mismatched iii-phosphide optoelectronic devices by molecular beam epitaxy
Author(s)
Kim, Mijung
Issue Date
2023-11-30
Director of Research (if dissertation) or Advisor (if thesis)
Lee, Minjoo L
Doctoral Committee Chair(s)
Lee, Minjoo L
Committee Member(s)
  • Bayram, Can
  • Dallesasse, John
  • Shim, Moonsub
Department of Study
Electrical & Computer Eng
Discipline
Electrical & Computer Engr
Degree Granting Institution
University of Illinois at Urbana-Champaign
Degree Name
Ph.D.
Degree Level
Dissertation
Keyword(s)
  • Lattice-mismatched
  • III-V
  • Epitaxy
  • MBE
  • Optoelectronic devices
Abstract
Epitaxial growth of high-quality III-V semiconductors that are lattice-mismatched to conventional substrates is vital to device applications such as high-efficiency multi-junction solar cells, LEDs, and laser diodes. Challenges arise due to the formation of defects driven by lattice mismatch that can damage the performance of III-V devices. In this thesis, I describe the growth of high-quality III-P materials by molecular beam epitaxy in lattice-mismatched systems for optoelectronic device applications. My work includes the development of compositionally graded buffers and growth optimization studies to mitigate challenges for lattice-mismatched materials. First, I demonstrate metamorphic 1.7 eV In0.63Ga0.37P front-junction and rear-heterojunction solar cells grown on GaAs substrates that show promise for high efficiency 1.7 eV/1.1 eV double junction solar cells and photovoltaic devices with efficient operation at elevated temperatures. Next, I demonstrate growth of GaP on silicon on insulator (SOI). Nanophotonic devices based on GaP have recently attracted significant interest due to their unique properties such as large refractive index, relatively wide bandgap, and non-centrosymmetric crystal structure, while SOI wafers are commonly used in silicon photonics. Taken together, this dissertation shows the challenges and opportunities of phosphide-based materials and devices grown on lattice-mismatched substrates.
Graduation Semester
2023-12
Type of Resource
Thesis
Copyright and License Information
Copyright 2023 Mijung Kim

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