University of Illinois Urbana-Champaign

Achieving wafer scale synthesis of molybdenum ditelluride through precursor engineering

Eladl, Marwan

Content Files
ELADL-THESIS-2023.pdf

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https://hdl.handle.net/2142/120181

Description

Title
Achieving wafer scale synthesis of molybdenum ditelluride through precursor engineering
Author(s)
Eladl, Marwan
Issue Date
2023-05-05
Director of Research (if dissertation) or Advisor (if thesis)
Zhu, Wenjuan
Department of Study
Electrical & Computer Eng
Discipline
Electrical & Computer Engr
Degree Granting Institution
University of Illinois at Urbana-Champaign
Degree Name
M.S.
Degree Level
Thesis
Keyword(s)
2D, TMD, CVD, MOCVD, Growth, Precursor, MoTe2, Wafer Scale
Abstract
Transition metal telluride (TMT) materials have very interesting electronic, magnetic, and phase change properties, that make them suitable for novel device structures such as reconfigurable, spin orbit torque, and phase change devices. However, adoption of these devices in industry is hindered by poor quality, small crystal size, and nonuniform growth of TMT material. As such, it is necessary to develop high quality, wafer scale processes for TMT growth. In this thesis, I explore two new precursors, molybdenum pentachlo- ride (MoCl5) and dibutyl tellurium ((C4H9)2Te) for the growth of molybde- num ditelluride (MoTe2). I separately test each precursor with conventional precursors. Specifically, running experiments using MoCl5 with tellurium powder in a chemical vapor deposition (CVD) growth and (C4H9)2Te with molybdenum oxide (MoO3) in a metal organic chemical vapor deposi- tion (MOCVD) growth. I was able to achieve single crystal growth of MoTe2 at temperatures as low as 500°C. This showed that MoCl5’s higher vapor pressure allowed for low temperature growth. Additionally, by increasing the temperature of the growth I showed that 2H-MoTe2 growth was preferable at high temperatures and 1T’-MoTe2 at lower temperatures. In the exploration of (C4H9)2Te, I was able to better understand the breakdown mechanisms of the precursor and the role hydrogen plays in this process. Using this infor- mation, I identify which molybdenum precursors were incompatible with the (C4H9)2Te. Finally, I explore the combination of MoCl5 and (C4H9)2Te in a MOCVD growth experiment. Using this combination I was able to achieve high quality wafer scale growth of 1T’-MoTe2. The results of my work show the viability of these precursors as alternatives to conventional precursors. This work also takes a step forward towards the commercialization of TMT device by reducing growth temperatures towards back-end compatibility.
Graduation Semester
2023-05
Type of Resource
Thesis
Handle URL
https://hdl.handle.net/2142/120181
Copyright and License Information
Copyright 2023 Marwan Eladl

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Graduate Theses and Dissertations at Illinois