University of Illinois Urbana-Champaign

Design, defect reduction, and dislocation tolerance of red lasers on Si (001)

Dhingra, Pankul

Content Files
DHINGRA-DISSERTATION-2022.pdf

Permalink

https://hdl.handle.net/2142/115740

Description

Title
Design, defect reduction, and dislocation tolerance of red lasers on Si (001)
Author(s)
Dhingra, Pankul
Issue Date
2022-04-22
Director of Research (if dissertation) or Advisor (if thesis)
Lee, Minjoo L
Doctoral Committee Chair(s)
Lee, Minjoo L
Committee Member(s)
  • Dallesasse, John M
  • Choquette, Kent D
  • Vlasov, Yurii
Department of Study
Electrical & Computer Eng
Discipline
Electrical & Computer Engr
Degree Granting Institution
University of Illinois at Urbana-Champaign
Degree Name
Ph.D.
Degree Level
Dissertation
Keyword(s)
  • Quantum dot laser
  • Quantum well laser
  • Epitaxial laser on silicon
  • Photonic integrated circuits
  • Defects
  • Optoelectronics
  • Material growth
  • Epitaxy
  • Material characterization
  • III-V materials
  • Molecular Beam Epitaxy
Abstract
Monolithic integration of III-V optoelectronic devices with silicon nitride photonics technology could open a wide range of on-chip applications spanning a wide wavelength range of 400 – 4000 nm. The wavelength palette of III-V lasers on Si spans 400 nm – 11 μm with the development of nitride, arsenide and antimonide quantum well (QW) and quantum dot (QD) lasers, leaving a crucial gap in the development of red lasers on Si with 630 – 750 nm emission using phosphide active region. In this dissertation, we demonstrate the development of InGaP QW and InP QD lasers on GaAs and Si (001) substrates, integrated on silicon nitride photonic integrated circuits using molecular beam epitaxy. It is found that InP QDs on Si (001) show a photoluminescence intensity similar to counterparts grown on GaAs (001), despite a threading dislocation density (TDD) of 3.3×107 cm-2. In contrast, InGaP QWs on Si (001), with the same TDD, show 9× degradation in PL intensity compared to QWs on GaAs. We demonstrate post-growth annealing as an essential step towards demonstration of MBE-grown phosphide lasers, with InGaP single quantum well (SQW) and InP multiple quantum dot (MQD) lasers on GaAs operating with a threshold current density (Jth) of 170 A/cm2 and 230 A/cm2 on GaAs (001), the lowest continuous wave (CW) Jth by any growth technique. We also demonstrate strategies to reduce the TDD of epitaxial GaAs/Si from > 4×108 cm-2 to 6×106 cm-2 by using dislocation filtering techniques. Utilizing low-TDD GaAs/Si templates and low-Jth active region design, we show the first CW- room temperature (RT) InGaP SQW and InP MQD lasers on GaAs/Si (001) with Jth of 550 A/cm2 and 690 A/cm2, respectively, the lowest reported to the best of our knowledge. The higher dislocation tolerance of phosphide lasers, compared to arsenide lasers, can be attributed to the low carrier diffusivity in phosphides. The dissertation also presents preliminary results on the integration of visible optoelectronic devices on photonic integrated circuits utilizing silicon nitride waveguides on Si substrates.
Graduation Semester
2022-05
Type of Resource
Thesis
Handle URL
https://hdl.handle.net/2142/115740
Copyright and License Information
Copyright 2022 Pankul Dhingra

Owning Collections

Graduate Dissertations and Theses at Illinois PRIMARY
Graduate Theses and Dissertations at Illinois