Impurity-induced disordering of vertical-cavity surface-emitting lasers: Applications to polarization control and high-speed modulation

Kraman, Mark D.

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https://hdl.handle.net/2142/115418 Copy

Description

Title

Impurity-induced disordering of vertical-cavity surface-emitting lasers: Applications to polarization control and high-speed modulation

Author(s)

Kraman, Mark D.

Issue Date

2022-04-26

Director of Research (if dissertation) or Advisor (if thesis)

Dallesasse, John M

Department of Study

Electrical & Computer Eng

Discipline

Electrical & Computer Engr

Degree Granting Institution

University of Illinois at Urbana-Champaign

Degree Name

M.S.

Degree Level

Thesis

Keyword(s)

vertical-cavity surface-emitting laser, impurity-induced disordering, single-mode, high-speed modulation, polarization

Abstract

Impurity-induced disordering (IID) of vertical-cavity surface-emitting lasers (VCSELs) as a platform technology enables mode engineering through the precise introduction of mirror loss while simultaneously improving top distributed Bragg reflector (DBR) conductivity. Strain-engineering of the diffusion masks used in IID processing impacts characteristics of the aspect ratio of the disordering diffusant and enables high-power single-mode emission. The modulation response and applicability of this platform to the goal of polarization control in 850 nm gallium arsenide-based oxide-confined VCSELs are investigated. An analysis of the high-frequency damping factors of IID VCSELs given varying disordering depths is provided. The experimental design and fabrication process for polarization controlled VCSELs using elliptical strain-engineered disorder-defined apertures is discussed, and measured polarization characteristics are analyzed as a function of strained diffusion mask ellipticity. The orthogonal polarization suppression ratios (OPSRs) of VCSELs using circular disorder-defined apertures under strain-engineered diffusion mask variants are discussed.

Graduation Semester

2022-05

Type of Resource

Thesis

Handle URL

https://hdl.handle.net/2142/115418

Copyright and License Information

© 2022 Mark D. Kraman

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