ELECTRICAL CHARACTERIZATION OF HIGH PERFORMANCE (001) β-Ga2O3 MOSCAP BY INVERSE METAL ASSISTED CHEMICAL ETCHING
Jiang, Bill
Loading…
Permalink
https://hdl.handle.net/2142/114942
Description
Title
ELECTRICAL CHARACTERIZATION OF HIGH PERFORMANCE (001) β-Ga2O3 MOSCAP BY INVERSE METAL ASSISTED CHEMICAL ETCHING
Author(s)
Jiang, Bill
Issue Date
2022-05
Keyword(s)
β-Ga2O3, wide bandgap, metal assisted chemical etching, MOSCAP, Dit, C-V Measurement
Abstract
β-Gallium Oxide (β-Ga2O3), with a bandgap of 4.6 - 4.7 eV, is a promising ultra-wide bandgap
material for high-power applications in next generation power electronics. Scaling and
performance requirements demand novel fabrication methods. In this work, we demonstrate
the method and electrical performance of a Metal-Oxide-Semiconductor capacitor structure
(MOSCAP) fabricated on a (001) β-Ga2O3 using metal assisted chemical etching (MacEtch). This project will involve using a suitable light source and a combination of metal catalysts with
proper oxidants to etch this material, producing 3D structures defined by our patterns. Then,
the capacitance−voltage (C-V) characteristics of the etched surface is observed, and interface
trap density extracted using photo assisted C-V measurements. The result is then compared to
an unetched planar β-Ga2O3 surface.
Use this login method if you
don't
have an
@illinois.edu
email address.
(Oops, I do have one)
IDEALS migrated to a new platform on June 23, 2022. If you created
your account prior to this date, you will have to reset your password
using the forgot-password link below.
